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11. Measured x Simulated Noise Figure In fig. 5dB quasi flat band gain is provided from 2 to 9 GHz. 4 supply voltage. 2 nH peaking inductor, and delivers the signal to the 50 load. 12 S21 (dB) 10 8 6 measured simulated 4 2 12 11 10 9 8 7 6 5 4 3 2 0 Frequency (GHz) Fig. 12. Measured x Simulated S21 parameters Fig. 13, depicting S21 and NFmin variations versus supply voltage emphasizes the ability of the current reuse topology to operate under low supply voltage. 9V since the input matching is not completed below.

10. e. a good tradeoff regarding to the 3 to 11 GHz frequency band of interest-. However resistive amplifier is not well suited to synthesize the imaginary part required by the noise matching of MOS transistor, especially over a wide bandwidth. For this reason, such kind of topology remains noisier than its LC ladder counterpart [9]. According to the expression (2), the high fT of the 130nm MOS technology combined with a large RF feedback resistor keeps the NF lower than 9dB up to 10 GHz thus addressing UWB requirement.

And Schutt-Ainé, J. E. (2001). Frequency-domain-coupled microstripline normal-mode parameter extraction from S-parameters, IEEE Transactions on Electromagnetic Compatibility, vol. 43, no. 4, pp. 495–503. Paul, C. R. (2008). Analysis of Multiconductor Transmission Lines, 2nd edition, WileyInterscience. Pozar, D. , Microwave Engineering, 3rd edition, Wiley, 2005. 32 Advanced Microwave Circuits and Systems Rautio, J. C. (1991). A new definition of characteristic impedance, IEEE MTT-S International Microwave Symposium, pp.

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